BPW24R www.vishay.com vishay semiconductors rev. 1.6, 11-aug-11 1 document number: 81520 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon pin photodiode, rohs compliant description BPW24R is a high sensitive silicon planar photodiode in a standard to-18 hermetically sealed metal case with a glass lens. a precise alignment of the ch ip gives a good coincidence of mechanical and optical axes. the device features a low capacitance and high speed even at low supply voltages. features ? package type: leaded ? package form: to-18 ? dimensions (in mm): ? 4.7 ? radiant sensitive area (in mm 2 ): 0.78 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 12 ? hermetically sealed package ? cathode connected to package ? central chip alignment ? compliant to rohs directive 2002/95/ec and in accordance with weee 2002/96/ec applications ? high speed photo detector note ? test condition see table basic characteristics note ? moq: minimum order quantity 948642 product summary component i ra ( a) ? (deg) ? 0.1 (nm) BPW24R 60 12 400 to 1100 ordering information ordering code packaging remarks package form BPW24R bulk moq: 1000 pcs, 1000 pcs/bulk to-18 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb ? 25 c p v 210 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 125 c storage temperature range t stg - 40 to + 125 c soldering temperature t ? 5 s t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 350 k/w
BPW24R www.vishay.com vishay semiconductors rev. 1.6, 11-aug-11 2 document number: 81520 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light cu rrent vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit breakdown voltage i r = 100 a, e = 0 v (br) 60 200 v reverse dark current v r = 50 v, e = 0 i ro 210na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 11 pf v r = 5 v, f = 1 mhz, e = 0 c d 3.8 pf v r = 20 v, f = 1 mhz, e = 0 c d 2.5 pf open circuit voltage e e = 1 mw/cm 2 , ? = 950 nm v o 450 mv temperature coefficient of v o e e = 1 mw/cm 2 , ? = 950 nm tk vo - 2 mv/k short circuit current e e = 1 mw/cm 2 , ? = 950 nm i k 55 a temperature coefficient of i k e a = 1 klx tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , ? = 950 nm, v r = 20 v i ra 45 60 a absolute spectral sensitivity v r = 5 v, ? = 870 nm s( ? )0.60a/w v r = 5 v, ? = 900 nm s( ? )0.55a/w angle of half sensitivity ? 12 deg wavelength of peak sensitivity ? p 900 nm range of spectral bandwidth ? 0.1 400 1100 nm rise time v r = 20 v, r l = 50 ? , ? = 820 nm t r 7ns fall time v r = 20 v, r l = 50 ? , ? = 820 nm t f 7ns 40 60 80 120 94 8454 100 20 10 0 10 1 10 2 10 3 10 4 v r =50v t amb - ambient temperature (c) i ro - reverse dark current (na) 0.6 0.8 1.0 1.2 1.4 94 8409 v r =5v = 950 nm 100 80 60 40 20 0 i - relative reverse light current t - ambient temperature (c) amb ra rel
BPW24R www.vishay.com vishay semiconductors rev. 1.6, 11-aug-11 3 document number: 81520 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. reverse voltage fig. 5 - diode capacitance vs. reverse voltage fig. 6 - relative spectral sensitivity vs. wavelength fig. 7 - relative radiant sensitivity vs. angular displacement 0.01 0.1 1 0.1 1 10 100 1000 10 94 8455 v r =10v = 950 nm e e - irradiance (mw/cm 2 ) i ra - reverse light current (a) 0.1 1 10 1 10 100 100 94 8456 1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 0.1 mw/cm 2 0.05 mw/cm 2 0.02 mw/cm 2 = 950 nm v r - reverse voltage (v) i ra - reverse light current (a) 0 2 4 6 8 12 10 0.1 1 10 c d - diode capacitance (pf) v r - reverse voltage (v) 100 94 8439 e = 0 f = 1 mhz 350 550 750 950 0 0.2 0.4 0.6 0.8 1.0 1150 94 8458 - wavelength (nm) s ( ) rel - relative spectral sensitivity 0.4 0.2 0 94 8459 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 s rel - relative sensitivity ? - angular displacement
BPW24R www.vishay.com vishay semiconductors rev. 1.6, 11-aug-11 4 document number: 81520 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters c a 2.54 nom. 5.5 0.15 6.15 0.25 13.2 0.7 ? 0.45 +0.02 -0.05 lens 4 0.05 ? 4.69 + 0.02 - 0.07 chip position drawing-no.: 6.503-5022.02-4 specifications according to din technical drawings (2.5) issue: 1; 24.08.98 14487
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